PART |
Description |
Maker |
HWF1686YC |
L-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
HWC30NC |
C-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
HWF1686NC |
3.5 W L-band power FET non-via hole chip
|
HEXAWAVE
|
HWC27YC HWC27YC-V1-15 |
C-Band Power Non-Via Hole Chip C-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HWF1682RA |
20 W L-band GaAs power FET
|
HEXAWAVE
|
FLC167WF |
C-Band Power GaAs FET
|
Fujitsu Component Limited.
|
FLC107WG |
C-Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|